General Information
    • ISSN: 1793-8201 (Print), 2972-4511 (Online)
    • Abbreviated Title: Int. J. Comput. Theory Eng.
    • Frequency: Quarterly
    • DOI: 10.7763/IJCTE
    • Editor-in-Chief: Prof. Mehmet Sahinoglu
    • Associate Editor-in-Chief: Assoc. Prof. Alberto Arteta, Assoc. Prof. Engin Maşazade
    • Managing Editor: Ms. Mia Hu
    • Abstracting/Indexing: Scopus (Since 2022), INSPEC (IET), CNKI,  Google Scholar, EBSCO, etc.
    • Average Days from Submission to Acceptance: 192 days
    • E-mail: ijcte@iacsitp.com
    • Journal Metrics:

Editor-in-chief
Prof. Mehmet Sahinoglu
Computer Science Department, Troy University, USA
I'm happy to take on the position of editor in chief of IJCTE. We encourage authors to submit papers concerning any branch of computer theory and engineering.

IJCTE 2013 Vol.5(6): 924-927 ISSN: 1793-8201
DOI: 10.7763/IJCTE.2013.V5.824

Finite Element Modeling of Copper Wire Bonding on a Stacked-Die in Semiconductor Devices

Xin Kai Tam, Pooria Pasbakhsh, N. Q. Guo, Norhazlina Ismail, and Kheng Lim Goh

Abstract—Finite element analysis of wire bonding on the overhang of a stacked-die was conducted. The stresses and deflection of the die was determined through the use of the commercially available solver ANSYS. In this study, the finite element model was used to simulate copper wire bonding on a stacked-die application. Copper with its higher hardness required more force to deform. The increase in force generates greater stresses on the die especially on the overhang region. This creates a scenario where the die is under a large amount of stress and may result in cracks. The study aims to determine the stresses and deflections of the die when bonding is carried out on the overhang of the die. It was discovered that the stresses and deflection of the die increases as the distance from the stacked die increases. The study also determined that increasing the thickness of the die leads to decrease in bending stress and deflection of the die.

Index Terms—Die deflection, finite element analysis, stacked die, copper wire bonding, overhang region, cracks.

Xin Kai Tam, Pooria Pasbakhsh, and N. Q. Guo are with Monash University Sunway Campus, Bandar Sunway, Malaysia (e-mail: pooria. pasbakhsh@monash.edu, anthony.guo@monash.edu). Norhazlina Ismail is with MIMOS, Technology Park Malaysia, Kuala Lumpur, Malaysia (e-mail: norhazlina.ismail@mimos.my). Kheng Lim Goh is with Newcastle University Singapore Campus, Singapore (e-mail: Kheng-lim.goh@ncl.ac.uk).

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Cite:Xin Kai Tam, Pooria Pasbakhsh, N. Q. Guo, Norhazlina Ismail, and Kheng Lim Goh, "Finite Element Modeling of Copper Wire Bonding on a Stacked-Die in Semiconductor Devices," International Journal of Computer Theory and Engineering vol. 5, no. 6, pp. 924-927, 2013.


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